Thermal and Plasma Enhanced Atomic Layer Deposition of Al[sub 2]O[sub 3] on GaAs Substrates
نویسندگان
چکیده
منابع مشابه
Introduction to (plasma-enhanced) atomic layer deposition
Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
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The atomic layer deposition of HfO2 thin films is studied on Si(100) and GaAs(100) surfaces. The films are grown using tetrakis(dimethyl)amino hafnium (TDMAH) and H2O precursors at a deposition temperature of 275°C. The Si surfaces used include a H-terminated surface and an OH-rich chemical oxide. GaAs substrates are subjected to two different predeposition treatments involving an HF and a NH4O...
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In this paper, a method for the plasma-enhanced (PE) atomic layer deposition (ALD) of palladium on air-exposed, annealed poly(p-xylylene) (Parylene-N, or PPX) is presented. Palladium is successfully deposited on PPX at 80 °C using a remote, inductively coupled, hydrogen/nitrogen plasma with palladium (II) hexafluoroacetylacetonate (Pd(hfac)2) as the precursor. By optimizing the mixture of hydro...
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Growing high-quality and uniform dielectric on black phosphorus is challenging since it is easy to react with O2 or H2O in ambient. In this work, we have directly grown Al2O3 on BP using plasma-enhanced atomic layer deposition (PEALD). The surface roughness of BP with covered Al2O3 film can reduce significantly, which is due to the removal of oxidized bubble in BP surface by oxygen plasma. It w...
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ژورنال
عنوان ژورنال: Journal of The Electrochemical Society
سال: 2009
ISSN: 0013-4651
DOI: 10.1149/1.3076143